Positron Annihilation at Dislocations and Related Point Defects in Semiconductors
نویسنده
چکیده
Dislocations act in semiconductors as combined positron traps, consisting of a shallow precursor state, which is related to regular parts of the dislocation line, and bound vacancy-like defects. The motion of dislocations during plastic deformation generates a high number of point defects. The clustering of vacancies to stable voids is regarded as a primary process of the jog dragging mechanism. Vacancy densities were quantitatively determined for different deformation conditions of GaAs.
منابع مشابه
پایداری سامانه اندازهگیری طول عمر پوزیترون و بررسی نوع و غلظت عیب ناشی از تابش الکترونهای 10 مگا الکترون ولتی بر نمونههای سیلیکونی نوع n و p
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